AO3413 symbol v ds v gs i dm t j , t stg symbol ty p max 70 90 100 125 r jl 63 80 w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a steady-state c/w 8 gate-source voltage drain-source voltage -20 continuous drain current a maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v -2.4 -15 pulsed drain current b power dissipation a t a =25c junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d -3 features v ds (v) = -20v i d = -3 a r ds(on) < 97m ? (v gs = -4.5v) r ds(on) < 130m ? (v gs = -2.5v) r ds(on) < 190m ? (v gs = -1.8v) the AO3413 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch or in pwm applications. s g d to-236 (sot-23) top view g d s p-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 6
AO3413 symbol min typ max units bv dss -20 v -1 t j =55c -5 i gss 100 na v gs(th) -0.3 -0.55 -1 v i d(on) -15 a 81 97 t j =125c 111 135 108 130 m ? 146 190 m ? g fs 47 s v sd -0.78 -1 v i s -2 a c iss 540 pf c oss 72 pf c rss 49 pf r g 12 ? q g 6.1 nc q gs 0.6 nc q gd 1.6 nc t d(on) 10 ns t r 12 ns t d(off) 44 ns t f 22 ns t rr 21 ns q rr 7.5 nc gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters i f =-3a, di/dt=100a/ s v gs =0v, v ds =-10v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-10v, i d =-3a gate source charge gate drain charge turn-on rise time turn-off delaytime v gs =-4.5v, v ds =-10v, r l =3.3 ? , r gen =3 ? m ? v gs =-2.5v, i d =-2.6a i s =-1a,v gs =0v v ds =-5v, i d =-3a r ds(on) static drain-source on-resistance forward transconductance diode forward voltage i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-16v, v gs =0v v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time body diode reverse recovery charge i f =-3a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.8v, i d =-1a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-3a reverse transfer capacitance a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 6
AO3413 typical electrical and thermal characteristics 0 5 10 15 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-1.5v -2.0v -2.5v -4.5v -8v -3.0v 0 2 4 6 0 0.5 1 1.5 2 -v gs (volts) figure 2: transfer characteristics -i d (a) 25c 125c v ds =-5v 50 100 150 200 0246 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =-1.8v v gs =-2.5v v gs =-4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v v gs =-1.8v v gs =-4.5v 50 100 150 200 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) i d =-4a 25c 125c www.freescale.net.cn 3 / 6
AO3413 typical electrical and thermal characteristics 0 1 2 3 4 5 02468 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 0 5 10 15 20 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t o n t p d d=t on /(t on +t off ) t j,pk =t a +p dm .z ja .r ja r ja =90c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 1 0s dc r ds(on) limited 10 s t j(max) =150c t a =25c v ds =-10v i d =-3a single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 6
symbols note: 1. lead finish: 150 microinches ( 3.8 um) min. thickness of tin/lead (solder) plated on lead 2. tolerance 0.10 mm (4 mil) unless otherwise specified 3. coplanarity : 0.10 mm 4. dimension l is measured in gage plane q 0.50 0.40 b 0.35 5 8 q 1 1 0.95 bsc e1 1.40 --- e l e 2.60 0.40 d c 2.80 0.10 1.80 --- 1.60 2.80 --- 2.95 0.60 2.90 0.15 3.04 0.25 dimensions in millimeters min a1 a2 a 0.00 1.00 1.00 max nom --- 1.10 0.10 1.15 1.25 --- seating plane gauge plane e1 --- 1.90 bsc --- sot-23 package data recommendation of land pattern p n d l n note: p n - part number code. d - yaer and week code. l n - assembly lot code, fab and assembly location code. code ao3411 ab part no. sot-23 part no. code package marking description rev. a www.freescale.net.cn 5 / 6
sot-23 tape and reel data sot-23 carrier tape sot-23 reel sot-23 tape leader / trailer & orientation www.freescale.net.cn 6 / 6
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